NTE25 (PNP)
Silicon Complementary Transistors General Purpose Amplifier, Switch

See also >>> NTE24 (NPN)

Description:
The NTE24 (NPN) and NTE25 (PNP) are complementary silicon transistors in a TO237 type package designed for general purpose medium power amplifier and switching circuits that require collector currents to 1A.

Features: - High Collector-Emitter Breakdown Voltage: VCEO = 80V
- Exceptional Power Dissipation Capability

Info as pdf-file
NTE-ECG replacement list as pdf-file
NTE-ECG diagrams

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector-Base Voltage, VCBO...................................................... 100V
Collector-Emitter Voltage, VCEO...................................................... 80V
Emitter-Base Voltage, VEBO.......................................................... 5V
Collector Current, IC
Continuous...................................................................1A
Peak........................................................................ 2A
Power Dissipation, PD
TA = +25°C.............................................................. 850mW
TC = +25°C.................................................................. 2W
Junction Temperature, TJ(max).....................................................+150°C
Storage Temperature Range, Tstg.......................................... -55° to +150°C
Thermal Resistance, Junction-to-Case, RthJC.....................................50°C/W
Thermal Resistance, Junction-to-Ambient, RthJA.................................. 167°C/W


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