NTE2312
Silicon NPN Transistor High Voltage, High Speed Switch

Description:
The NTE2312 is a silicon NPN transistor in a TO220 type package designed for high-voltage, high- speed power switching inductive circuits where fall time is critical. This device is particularly suited for 115V and 220V switch-mode applications such as switching regulators, inverters, motor controls, solenoid/relay drivers, and deflection circuits.

Info as pdf-file
NTE-ECG replacement list as pdf-file
NTE-ECG diagrams

Absolute Maximum Ratings:
Collector-Emitter Voltage, VCEO(sus).................................................400V
Collector-Emitter Voltage, VCEV.....................................................700V
Emitter-Base Voltage, VEBO.......................................................... 9V
Collector Current, IC
Continuous...................................................................8A
Peak (Note 1)................................................................ 16A
Base Current, IB
Continuous...................................................................4A
Peak (Note 1).................................................................8A
Emitter Current, IE
Continuous.................................................................. 12A
Peak (Note 1)................................................................ 24A
Total Power Dissipation (TA = +25°C), PD.............................................. 2W
Derate Above 25°C...................................................... 16mW/°C
Total Power Dissipation (TC = +25°C), PD............................................ 80W
Derate Above 25°C.....................................................640mW/°C
Operating Junction Temperature Range, TJ.................................. -65° to +150°C
Storage Temperature Range, Tstg.......................................... -65° to +150°C
Thermal Resistance, Junction-to-Case, RthJC.................................... 1.56°C/W
Thermal Resistance, Junction-to-Ambient, RthJA.................................. 62.5°C/W
Lead Temperature (During Soldering, 1/8” from case, 5sec), TL.......................+275°C

Note 1. Pulse Test: Pulse Width = 5ms, Duty Cycle ≤ 10%.


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