NTE63
Silicon NPN Transistor High Gain, Low Noise Amp, Mixer

Description:
The NTE63 is a silicon NPN high frequency transistor designed primarily for use in high-gain, low noise tuned and wiseband small-signal amplifiers and applications requiring fast switching times.

Features:
- High Current Gain-Bandwidth Product: fT = 5GHz Typ @ f = 1GHz
- High Power Gain: Gpe = 12.5dB Min @ f = 1GHz

Info as pdf-file
NTE-ECG replacement list as pdf-file
Diagrams and Info of most NTE-ECG Components

Absolute Maximum Ratings:
Collector-Emitter Voltage, VCEO...................................................... 12V
Collector-Base Voltage, VCBO.......................................................20V
Emitter-Base Voltage, VEBO.......................................................... 2V
Continuous Collector Current, IC...................................................40mA
Total Device Dissipation (TL = +50°C), PD.........................................400mW
Derate Above 50°C.....................................................4.0mW/°C
Storage Temperature Range, Tstg.......................................... -65° to +150°C
Thermal Resistance, Junction-to-Lead, RthJL.....................................250°C/W


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