NTE51 NTE-51 | ECG51 ECG-51 | NTE Electronics
NTE51
Silicon NPN Transistor
High Voltage, High Speed Switch
Description:
The NTE51 is a silicon NPN transistor in a TO220 type package designed for high-voltage, high-
speed power switching inductive circuits where fall time is critical. This device is particularly suited
for 115V and 220V SWITCHMODE applications such as switching regulators, Inverters, motor controls,
solenoid/relay drivers and deflection circuits.
Features:
- Reverse Bias SOA with Inductive Loads @ TC = +100°C
- 700V Blocking Capability
Info as pdf-file
NTE-ECG replacement list as pdf-file
Diagrams and Info of most NTE-ECG Components
Absolute Maximum Ratings:
Collector-Emitter Voltage, VCEO(sus).................................................400V
Collector-Emitter Voltage, VCEV.....................................................700V
Emitter Base Voltage, VEBO...........................................................9V
Collector Current,IC
Continuous...................................................................4A
Peak (Note 1).................................................................8A
Base Current, IB
Continuous...................................................................2A
Peak (Note 1).................................................................4A
Emitter Current, IE
Continuous...................................................................6A
Peak (Note 1)................................................................ 12A
Total Power Dissipation (TA = +25°C), PD.............................................. 2W
Derate above 25°C...................................................... 16mW/°C
Total Power Dissipation (TC = +25°C), PD............................................ 75W
Derate above 25°C.....................................................600mW/°C
Operating Junction Temperature Range, TJ.................................. -65° to +150°C
Storage Temperature Range, Tstg.......................................... -65° to +150°C
Thermal Resistance, Junction-to-Case, RthJC.................................... 1.67°C/W
Thermal Resistance, Junction-to-Ambient, RthJA.................................. 62.5°C/W
Lead Temperature (During Soldering, 1/8” from case, 5sec), TL.......................+275°C
Note 1. Pulse test: Pulse Width = 300μs, Duty Cycle = 2%.
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