NTE248 (PNP)
Silicon Complementary Transistors Darlington Power Amplifier

See also >>> NTE247 (NPN)

Description:
The NTE247 (NPN) and NTE248 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for general-purpose amplifier and low-frequency switching applications.

Features:
- High DC Current Gain: hFE = 3500 Typ @ IC = 5A
- Collector-Emitter Sustaining Voltage: VCEO(sus) = 100V Min @ 100mA
- Monolithic Construction with Built-In Base-Emitter Shunt Resistors

Info as pdf-file
NTE-ECG replacement list as pdf-file
NTE-ECG diagrams

Absolute Maximum Ratings:
Collector-Emitter Voltage, VCEO.....................................................100V
Collector-Base Voltage, VCB........................................................ 100V
Emitter-Base Voltage, VEB...........................................................5V
Collector Current, IC
Continuous.................................................................. 12A
Peak...................................................................... 120A
Base Current, IB................................................................ 200mA
Total Power Dissipation (TC = +25°C), PD...........................................150W
Derate Above 25°C.....................................................0.857W/°C
Operating Junction Temperature Range, TJ.................................. -65° to +200°C
Storage Temperature Range, Tstg.......................................... -65° to +200°C
Thermal Resistance, Junction-to-Case, RthJC.................................... 1.17°C/W


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