NTE270 NPN Si-Transistor Darlington hFE=1000 10A 100V TO-3P or TO-218
Silicon Complementary Transistors Darlington Power Amp, Switch

See also >>> NTE271 (PNP)

Description:
The NTE270 (NPN) and NTE271 (PNP) are silicon Darlington complementary power transistors in a TO218 type package designed for general purpose amplifier and low frequency switching applications.

Features:
- High DC Current Gain: hFE = 1000 Min @ IC = 5A, VCE = 4V
- Collector-Emitter Sustaining Voltage: VCEO(sus) = 100V Min @ 30mA
- Monolithic Construction with Built-In Base-Emitter Shunt Resistor

Info as pdf-file
NTE-ECG replacement list as pdf-file
NTE-ECG diagrams

Absolute Maximum Ratings:
Collector-Emitter Voltage, VCEO.....................................................100V
Collector-Base Voltage, VCB........................................................ 100V
Emitter-Base Voltage, VEB...........................................................5V
Collector Current, IC
Continuous.................................................................. 10A
Peak (Note 1)................................................................ 15A
Continuous Base Current, IB...................................................... 500mA
Total Device Dissipation (TC = +25°C), PD...........................................125W
Operating Junction Temperature Range, TJ.................................. -65° to +150°C
Storage Temperature Range, Tstg.......................................... -65° to +150°C
Thermal Resistance, Junction-to-Case, RthJC.....................................1.0°C/W
Thermal Resistance, Junction-to-Ambient, RthJA.................................. 35.7°C/W

Note 1. Pulse Width = 5ms, Duty Cycle ≤ 10%.


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