NTE338F
Silicon NPN Transistor RF Power Amp, Driver

Description:
The NTE338F is a silicon NPN transistor in a W52K type package designed primarily for use as a power linear amplifier from 2 to 30MHz.

Features:
- Specified 12.5V, 30MHz Characteristics:
Output Power = 20W (PEP)
Minimum Gain = 12dB
Efficiency = 45%
- Intermodulation Distortion @ 20W (PEP):
IMD = −30dB Min
- 100% Tested for Load Mismatched at all Phase Angle with 30:1 VSWR

Info as pdf-file
NTE-ECG replacement list as pdf-file
NTE-ECG diagrams

Absolute Maximum Ratings:
Collector−Emitter Voltage, VCEO...................................................... 20V
Collector−Base Voltage, VCBO.......................................................40V
Emitter−Base Voltage, VEBO.......................................................... 4V
Continuous Collector Current, IC...................................................... 4A
Withstand Current (t = 5s)...........................................................12A
Total Device Dissipation (TC = +25°C), PD............................................ 80W
Derate Above 25°C...................................................... 0.46W/°C
Operating Junction Temperature, TJ...............................................+200°C
Storage Temperature Range, Tstg.......................................... −65° to +150°C
Thermal Resistance, Junction−to−Case, RthJC.....................................2.2°C/W


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