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NTE379 NPN Si-Transistor 12A 400V Power Amplifier TO-220

Bestell-Nr.:    NTE379


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NTE379 NTE-379 | ECG379 ECG-379 | NTE Electronics NTE379
Silicon NPN Transistor Power Amp, High Voltage, Switch

Description:
The NTE379 is a silicon NPN transistor in a TO220 type package designed for high-voltage, high- speed power switching inductive circuits where fall time is critical. This device is particularly suited for 115 and 220V switch-mode applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers, and Deflection circuits.

Features:
- VCEO(sus) = 400V
- Reverse Bias SOA with Inductive Loads @ TC = +100°C
- 700V Blocking Capability

Info as pdf-file
NTE-ECG replacement list as pdf-file
Diagrams and Info of most NTE-ECG Components

Absolute Maximum Ratings:
Collector-Emitter Voltage, VCEO(sus).................................................400V
Collector-Emitter Voltage, VCEV.....................................................700V
Emitter-Base Voltage, VEBO.......................................................... 9V
Collector Current, IC
Continuous.................................................................. 12A
Peak (Note 1)................................................................ 24A
Base Current, IB
Continuous...................................................................6A
Peak (Note 1)................................................................ 12A
Emitter Current, IE
Continuous.................................................................. 18A
Peak (Note 1)................................................................ 36A
Total Power Dissipation (TA = +25°C), PD.............................................. 2W
Derate Above 25°C...................................................... 16mW/°C
Total Power Dissipation (TC = +25°C), PD...........................................100W
Derate Above 25°C.....................................................800mW/°C
Operating Junction Temperature Range, TJ.................................. -65° to +150°C
Storage Temperature Range, Tstg.......................................... -65° to +150°C
Thermal Resistance, Junction to Case, RthJC.....................................1.25°C/W
Thermal Resistance, Junction to Ambient, RthJA...................................62.5°C/W
Lead Temperature (During Soldering, 1/8” from case for 5sec), TL.....................+275°C

Note 1. Pulse Test: Pulse Width = 5ms, Duty Cycle ≤ 10%.


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