NTE5463
Silicon Controlled Rectifier (SCR) 10A, 200V TO-220

See also >>> NTE5461 thru NTE5468

Description:
The NTE5461 through NTE5468 series silicon controlled rectifiers are designed primarily for half- wave AC control applications such as motor controls, heating controls, and power supplies; or wherever half-wave silicon gate-controlled, solid-state devices are needed. These devices are supplied in a TO220 type package.

Features:
- Glass Passivated Junctions and Center Gate Fire for Greater Parameter Uniformity and Stability
- Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation, and Durability
- Blocking Voltage to 800 Volts

Info as pdf-file
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Absolute Maximum Ratings:
Peak Repetitive Reverse Voltage; Peak Repetitive Off-State Voltage (Note 1), VRRM, VDRM
NTE5461.................................................................... 50V
NTE5462...................................................................100V
NTE5463...................................................................200V
NTE5465...................................................................400V
NTE5466...................................................................600V
NTE5468...................................................................800V
Non-Repetitive Peak Reverse Voltage; Non-Repetitive Off-State Voltage, VRSM, VDSM
NTE5461.................................................................... 75V
NTE5462...................................................................125V
NTE5463...................................................................250V
NTE5465...................................................................500V
NTE5466...................................................................700V
NTE5468...................................................................900V
RMS Forward Current (All Conducting Angles, TC = +75°C), IT(RMS)...................... 10A
Peak Forward Surge Current (1 Cycle, Sine Wave, 60Hz, TC = +80°C), ITSM.............. 100A
Circuit Fusing Considerations (TJ = -65° to +100°C, t = 1 to 8.3ms), I2t.................40A2s
Forward Peak gate Power (t ≤ 10μs), PGM............................................ 16W
Forward Average Gate Power, PG(AV).............................................. 500mW
Operating Junction Temperature Range, TJ.................................. -40° to +100°C
Storage Temperature Range, Tstg.......................................... -40° to +150°C
Thermal Resistance, Junction-to-Case, RthJC.......................................2°C/W

Note 1. VDRM and VRRM for all types can be applied on a continuous DC basis without incurring damage. Ratings apply for zero or negative gate voltage. Devices shall not have a positive bias applied to the gate concurrently with a negative potential on the anode.


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