NTE5513
Silicon Controlled Rectifier (SCR), 5A, 600V TO-126

See also >>> NTE5511, NTE5512

Description:
The NTE5511 thru NTE5513 all-diffused, three junction, silicon controlled rectifiers (SCR´s) are intended for use in power-control and power-switching applications. These devices are available in a TO66 type package and have a blocking voltage capability of up to 600V and a forward current rating of 5A (rms value) at a case temperature of +75°C.

Features:
- Designed Especially for High-Volume Systems
- Readily Adaptable for PC Boards and Metal Heat Sinks
- Low Switching Losses
- High di/dt and dv/dt Capabilities
- Shorted Emitter Gate-Cathode Construction
- Forward and Reverse Gate Dissipation Ratings
- All-Diffused Construction Assures Exceptional Uniformity and Stability of Characteristics
- Direct-Soldered Internal Construction Assures Exceptional Resistance to Fatigue
- Symmetrical Gate-Cathode Construction Provides Uniform Current Density, Rapid Electrical Conduction, and Efficient Heat Dissipation
- All-Welded Construction and Hermetic Sealing
- Low Leakage Currents, Forward and Reverse
- Low Forward Voltage Drop at High Current Levels
- Low Thermal Resistance

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Absolute Maximum Ratings: (For Operation with Sinusoidal AC Supply Voltage at a Frequency between 50Hz and 400Hz, and with Resistive or Inductive Load)
Transient Peak Reverse Voltage (Non-Repetitive), VRM (non-rep)
NTE5511...................................................................330V
NTE5512...................................................................660V
NTE5513...................................................................700V
Peak Reverse Voltage (Repetitive), VRM (rep)
NTE5511...................................................................200V
NTE5512...................................................................400V
NTE5513...................................................................600V
Peak Forward Blocking Voltage (Repetitive), VFBOM (rep)
NTE5511...................................................................600V
NTE5512...................................................................600V
NTE5513...................................................................700V
Average DC Forward Current, IF(av)
(TC = +75°C mounted on heat sink, conduction angle or 180°).................... 3.2A
RMS Forward Current (TC = +75°C mounted on heat sink), IFRMS.........................5A
Peak Surge Current (For one cycle of applied voltage), iFM(surge).........................60A
Sub-Cycle Surge (Non-Repetitive, for a period of 1ms to 8.3ms), I2t.................. 15A2sec
Rate of Change of Forward Current (Note 1), di/dt.................................. 200A/μs
Gate Power (Peak, Forward, or Reverse, for 10μs duration, Note 2), PGM................ 13W
Average Gate Power (Note 2), PGAV...............................................500mW
Operating Case Temperature Range, TC.................................... -40° to +100°C
Storage Temperature Range, Tstg.......................................... -40° to +125°C

Note 1. VFB = vBOO(min value), IGT = 200mA, 0.5μs rise time
Note 2. Any values of peak gate current or peak gate voltage to give the maximum gate power is permissible.


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