NTE5589
Silicon Controlled Rectifier (SCR), 1200V, 550A TO-118
for Phase Control Applications

To order >>> NTE5587, NTE5593

Features:
- Low On-State Voltage
- High di/dt
- High dv/dt
- Excellent Surge and I2t Ratings

Applications:
- Power Supplies
- Battery Chargers
- Motor Controls

Info as pdf-file
NTE-ECG replacement list as pdf-file
Diagrams and Info of most NTE-ECG Components

Absolute Maximum Ratingsand Electrical Characteristics:
Repetitive Peak Voltages, VDRM & VRRM
NTE5587...................................................................600V
NTE5589.................................................................. 1200V
NTE5593.................................................................. 1600V
RMS On-State Current, IT(RMS).....................................................550A
Average On-State Current, IT(AV).....................................................350
Peak One-Cycle, Non-Repetitive On-State Surge Current, ITSM
50Hz.....................................................................9100A
60Hz...................................................................10,000A
Critical Rate-of-Rise of On-State Current, di/dt
Repetitive...............................................................150A/μs
Non-Repetitive.......................................................... 800A/μs
I2t fo Fusing (8.2ms), I2t.................................................... 416,000 A2 sec
Peak Gate Power Dissipation, PGM.................................................. 16W
Average Gate Power Dissipation, PG(AV).............................................. 3W
Peak On-State Voltage (ITM = 625A, TJ = +25°C), VTM.................................1.4V
Peak Forward Leakage Current (At VDRM, TJ = +125°C), IDRM.........................30mA
Peak Reverse Leakage Current (At VRRM, TJ = +125°C), IRRM.........................30mA
Gate Current to Trigger (VD = 12V, TJ = +25°C), IGT.................................150mA
Gate Voltage to Trigger (VD = 12V, TJ = +25°C), VGT.....................................3V
Non-Triggering Gate Voltage (At VDRM, TJ = +125°C), VGDM...........................0.15V
Peak Forward Gate Current, IGTM.....................................................4A
Peak Reverse Gate Voltage, VGRM.................................................... 5V
Typical Turn-Off Time, tq
(IT = 250A, diR/dt = 25A/μs, re-applied, dv/dt = 20V/μs, linear to 0.8VDRM, TJ = +125°C) 150μs
Typical Turn-On Time (VD = 100V, IT = 100A), ton...................................... 7μs
Minimum Critical dv/dt exponential to VDRM (TJ = +125°C), dv/dt.....................300V/μs
Operating Junction Temperature Range, TJ.................................. -40° to +125°C
Storage Temperature Range, Tstg.......................................... -40° to +150°C
Maximum Thermal Resistance, Junction-to-Case, RthJC...........................0.10°C/W
Maximum Thermal Resistance, Case-to-Sink (Lubricated), RthCS...................0.05°C/W
Mounting Torque.............................................................. 360in.-lb.
Mounting Torque (Lubricated).................................................. 400kg-cm


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